BUX80 v ces collector ? emitter voltage v be = 0 v cer collector ? emitter voltage r be = 50 ? v ceo collector ? emitter voltage i b = 0 v ebo emitter ? base voltage i c = 0 i c collector current i cm peak collector current i b base current p tot total power dissipation t case = 40c t stg storage temperature range t j maximum junction temperature 800v 500v 400v 10v 10a 15a 5a 100w -65 to +150c +150c mechanical data dimensions in mm (inches) 12 3 (case) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 3.84 (0.151) 4.09 (0.161) 0.97 (0.060) 1.10 (0.043) 7.92 (0.312) 12.70 (0.50) 22.23 (0.875) max. 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) high current high speed high power silicon npn planar transistor absolute maximum ratings (t j = 25 c unless otherwise stated) to?204aa (to?3) pin 1 ? base pin 2 ? emitter case is collector. applications the BUX80 is an epitaxial silicon npn planar transistor that has high current and high power handling capability and high switching speed. this device is especially suitable for switching ? control amplifiers, power gates, switching regulators, power-switch- ing circuits converters, inverters and control circuits. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. document number 6049 issue 1
parameter test conditions min. typ. max. unit v ceo(br) v cer(br) v ce(sat) v be(sat)* i ebo h fe t on t s t f BUX80 i c = 100ma i b = 0 i c = 100ma r be = 50 ? i c = 5a i b = 1a i c = 8a i b = 2.5a i c = 5a i b = 1a i c = 8a i b = 2.5a i c = 0 v be = 10v i c = 1.2a v ce = 5v i c = 5a v cc = 250v i b1 =1a i b2 = -2a i c = 5a v cc =-250v i b1 =1a i b2 = -2a collector - emitter breakdown voltage collector - emitter breakdown voltage collector ? emitter saturation voltage base ? emitter saturation voltage emitter cut-off current dc current gain turn ? on time storage time fall time 400 500 1.5 3 1.4 1.8 10 30 0.5 3.5 0.5 v v v ma ? s s electrical characteristics (t j = 25 c unless otherwise stated) thermal characteristics r th j-mb thermal resistance junction to case 1.1 c/w semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. document number 6049 issue 1
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